Researchers have developed a flash memory technology capable of subnanosecond switching speeds, significantly faster than current technologies. This breakthrough uses hot electrons generated by quantum tunneling through a ferroelectric hafnium zirconium oxide barrier, modulating the resistance of a ferroelectric tunnel junction. The demonstrated write speed of 0.5 nanoseconds, coupled with multi-level cell capability and good endurance, opens possibilities for high-performance and low-power non-volatile memory applications. This ultrafast switching potentially bridges the performance gap between memory and logic, paving the way for novel computing architectures.
The blog post details a teardown and analysis of a SanDisk High Endurance microSDXC card. The author physically de-caps the card to examine the controller and flash memory chips, identifying the controller as a SMI SM2703 and the NAND flash as likely Micron TLC. They then analyze the card's performance using various benchmarking tools, observing consistent write speeds around 30MB/s, significantly lower than the advertised 60MB/s. The author concludes that while the card may provide decent sustained write performance, the marketing claims are inflated and the "high endurance" aspect likely comes from over-provisioning rather than superior hardware. The post also speculates about the internal workings of the pSLC caching mechanism potentially responsible for the consistent write speeds.
Hacker News users discuss the intricacies of the SanDisk High Endurance card and the reverse-engineering process. Several commenters express admiration for the author's deep dive into the card's functionality, particularly the analysis of the wear-leveling algorithm and its pSLC mode. Some discuss the practical implications of the findings, including the limitations of endurance claims and the potential for data recovery even after the card is deemed "dead." One compelling exchange revolves around the trade-offs between endurance and capacity, and whether higher endurance necessitates lower overall storage. Another interesting thread explores the challenges of validating write endurance claims and the lack of standardized testing. A few commenters also share their own experiences with similar cards and offer additional insights into the complexities of flash memory technology.
Summary of Comments ( 21 )
https://news.ycombinator.com/item?id=43740803
Hacker News users discuss the potential impact of subnanosecond flash memory, focusing on its speed improvements over existing technologies. Several commenters express skepticism about the practical applications given the bottleneck likely to exist in the interconnect speed, questioning if the gains justify the complexity. Others speculate about possible use cases where this speed boost could be significant, like in-memory databases or specialized hardware applications. There's also a discussion around the technical details of the memory's operation and its limitations, including write endurance and potential scaling challenges. Some users acknowledge the research as an interesting advancement but remain cautious about its real-world viability and cost-effectiveness.
The Hacker News post titled "Subnanosecond Flash Memory" with the ID 43740803 has several comments discussing the linked Nature article about a new type of flash memory. While many commenters express excitement about the potential of this technology, a significant portion of the discussion revolves around its practicality and commercial viability.
Several comments question the real-world implications of the speed improvements, pointing out that the overall system performance is often limited by other factors like interconnect speeds and software overhead. One commenter highlights that while sub-nanosecond switching is impressive, it doesn't necessarily translate to a proportional improvement in overall system performance. They argue that other bottlenecks will likely prevent users from experiencing the full benefit of this increased speed.
Another recurring theme is the discussion around the energy consumption of this new technology. Commenters acknowledge the importance of reducing energy consumption in memory devices, but some express skepticism about the energy efficiency of the proposed solution. They inquire about the energy costs associated with the high switching speeds and whether these gains are offset by increased power demands.
Some commenters delve into the technical details of the paper, discussing the materials and fabrication processes involved. They raise questions about the scalability and manufacturability of the proposed technology, wondering how easily it could be integrated into existing manufacturing processes.
Several commenters compare this new flash memory with other emerging memory technologies, such as MRAM and ReRAM. They discuss the potential advantages and disadvantages of each technology, speculating about which might ultimately become the dominant technology in the future.
There's also a discussion regarding the specific applications where this technology would be most beneficial. Some suggest high-performance computing and AI applications, while others mention the potential for improvements in mobile devices and embedded systems.
Finally, some commenters express a cautious optimism, acknowledging the potential of the technology while also recognizing the significant challenges that need to be overcome before it becomes commercially viable. They emphasize the importance of further research and development to address the issues of scalability, energy efficiency, and cost-effectiveness.